PEMH9,115

Overview

The PEMH9,115 is a dual NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. in an SOT-666 surface-mount package. It integrates two independent NPN transistors with built-in bias resistors: R1 (input) has a typical value of 10 kΩ, and the R2/R1 ratio is typically 4.7. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA per transistor. Total power dissipation is rated at 300 mW at 25 °C ambient temperature. The transition frequency (fT) reaches 230 MHz, and the DC current gain (hFE) is guaranteed to be at least 100 at IC = 5 mA.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to reduce external component count.
• Provides simplified circuit design for digital switching applications without requiring base drive calculations.
• Features ultra-small SOT-666 packaging to minimize printed circuit board space requirements.

Applications

• Low current peripheral driver circuits
• Controlling integrated circuit inputs
• Replacement for general purpose transistors in digital logic applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging details such as reel or cut tape specifications. Confirm that the non-automotive qualification status aligns with the target application environment, as this part lacks AEC-Q101 certification. Ensure the selected distributor provides traceable documentation matching the official Nexperia product data sheet revision.

Selection Notes

Select this component when designing low-power digital interfaces requiring pre-biased NPN switches. The integrated 10 kΩ input resistor simplifies base drive networks compared to discrete transistors. Verify that the 50 V collector-emitter rating exceeds the maximum operating voltage of the controlled load. Consider the 300 mW total power dissipation limit when calculating thermal performance on the PCB footprint.

Part Context

The PEMH9 belongs to the Nexperia RET family, which combines bipolar junction transistors with internal biasing networks. It serves as the NPN/NPN variant within a series that includes PNP/PNP (PEMB9) and complementary NPN/PNP (PEMD9) options. This family is designed to replace multiple discrete components in signal processing and switching tasks.

Replacement Considerations

Direct functional equivalents include the PIMH9 and PUMH9, which share identical electrical characteristics but utilize different package types (SOT-457 and SOT-363 respectively). When substituting, verify pinout compatibility and physical dimensions to ensure the replacement fits the existing PCB layout constraints.

FAQ

What are the values of the built-in bias resistors?

The input bias resistor (R1) has a typical value of 10 kΩ, and the ratio between the second resistor and R1 (R2/R1) is typically 4.7.

Is the PEMH9 qualified for automotive applications?

No, the PEMH9 is not automotive qualified. It has not been tested according to automotive standards and should not be used in life-critical or safety-critical systems.

What is the maximum total power dissipation?

The total power dissipation (Ptot) for the device is 300 mW when the ambient temperature is 25 °C or lower.