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The PEMH9,315 is a dual NPN pre-biased transistor array manufactured by Nexperia USA Inc. It integrates two NPN bipolar junction transistors with built-in biasing resistors in a compact SOT-666 surface-mount package. The device features a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Internal resistor values are typically 10 kΩ for the base resistor (R1) and 47 kΩ for the emitter resistor (R2). With a maximum power dissipation of 300 mW and a DC current gain (hFE) of 100 at 5 mA/5 V, it supports operation across a temperature range from -55°C to +150°C.
Verify the specific suffix against official Nexperia documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and AEC-Q101 qualification requirements with the manufacturer before integration into automotive designs. Ensure availability matches project timelines as supply conditions may vary.
Select this component when space-constrained designs require dual NPN switching with fixed biasing. Compare internal resistance values against target drive currents to ensure adequate saturation. Verify that the 300 mW power dissipation rating accommodates the expected thermal load in the final enclosure environment.
This part belongs to Nexperia's pre-biased transistor portfolio, designed to replace multiple discrete components. It consolidates two NPN transistors and their associated resistors into a single footprint, reducing board space and assembly complexity compared to individual transistor-resistor combinations.
Publicly confirmed substitutes include PEMH9,115.