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The PEMT1,115 is a PNP general purpose double transistor manufactured by Nexperia USA Inc. It features two separate PNP elements within a single SOT-363 (SC-88) plastic package. The device supports a maximum collector current of 0.1 A and a collector-emitter voltage of 40 V. It offers a minimum DC current gain (hFE) of 120 and a maximum power dissipation of 0.3 W. The component operates at temperatures up to 150 °C and is RoHS compliant.
Verify the specific ordering suffix and packaging configuration when sourcing. Confirm that the selected variant matches the required lead time and production cycle expectations. Ensure compliance with RoHS directives and check for any end-of-life notifications before finalizing procurement plans for long-term projects.
Select this component for designs requiring dual PNP functionality in a minimal footprint. The SOT-363 package replaces two individual SOT-323 devices, reducing pick-and-place costs. Ensure the 40 V voltage rating and 0.1 A current limit align with the target application's electrical requirements.
This part belongs to Nexperia's portfolio of resistor-equipped and general-purpose transistors. It is designed to replace discrete components, offering a cost-effective solution for space-constrained PCB layouts. The series is widely used in consumer electronics and automotive interfaces where reliability and miniaturization are critical.
Direct substitutes include other dual PNP transistors in SOT-363 packages from compatible manufacturers. Verify pinout compatibility and electrical parameters such as hFE and Vceo before substitution.