PHD18NQ10T,118

Description：MOSFET N-CH 100V 18A DPAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)

SKU:a1a98e21c762 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

PHD18NQ10T,118 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 100V 18A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PHD18NQ10T,118

Description：MOSFET N-CH 100V 18A DPAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：633 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：79W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for PHD18NQ10T,118

PHD18NQ10T,118

Single FETs, MOSFETs Overview

The PHD18NQ10T is an N-channel enhancement mode field-effect power transistor utilizing TrenchMOS technology. It features a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 18 A at 25 °C. The device exhibits a maximum on-state resistance (RDS(ON)) of 90 mΩ at VGS = 10 V and ID = 9 A. It operates within a junction temperature range of -55 °C to 175 °C and is housed in the SOT428 (DPAK) surface-mount package.

Single FETs, MOSFETs Feature Summary

Employs TrenchMOS technology for low on-state resistance and fast switching performance.
Provides high thermal efficiency with a thermal resistance from junction to mounting base of 1.9 K/W.
Includes an integrated body diode with defined reverse recovery characteristics.

Single FETs, MOSFETs Applications

DC to DC converters
Switched mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the specific package variant required, as the datasheet indicates different suffixes correspond to distinct physical packages such as TO-220AB or D2PAK. Confirm the component status and availability directly with authorized distributors or the manufacturer, as product specifications may be subject to change without notice.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust N-channel switching capabilities with moderate voltage ratings. Ensure the design accommodates the thermal constraints by providing adequate heatsinking, given the specified thermal resistance values. Verify that the gate drive voltage aligns with the threshold requirements for optimal conduction.

Single FETs, MOSFETs Part Context

This part belongs to the Philips Semiconductors (now NXP) TrenchMOS family of power transistors. These devices are engineered to offer superior performance compared to standard planar MOSFETs, particularly in terms of on-resistance and switching speed, making them suitable for efficient power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Consult the official datasheet for cross-reference information. Equivalent parts must match the 100 V VDSS, 18 A ID rating, and SOT428 package footprint while maintaining comparable RDS(ON) and thermal characteristics.