PHN210,118

Overview

The PHN210,118 is a dual N-channel enhancement mode TrenchMOS transistor manufactured by Nexperia. It integrates two independent MOSFETs in an SOT96-1 (SO8) surface-mount package. The device features a drain-source voltage rating of 30 V and supports continuous drain currents up to 3.4 A per channel at 25 °C. On-state resistance is specified as ≤ 100 mΩ at VGS = 10 V and ≤ 200 mΩ at VGS = 4.5 V. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual configuration with low threshold voltage for logic level compatibility
• Fast switching performance utilizing trench technology
• Surface mount packaging suitable for automated assembly

Applications

• Motor drivers
• Relay drivers
• DC-to-DC converters
• Logic level translators

Procurement Notes

Verify the manufacturer designation on the datasheet header, as the product was transferred from NXP Semiconductors to Nexperia B.V. Ensure the ordering suffix matches the required tape and reel packaging format. Confirm RoHS compliance status against the specific revision date of the document provided by the supplier.

Selection Notes

Select this component when space-constrained designs require two independent N-channel switches in a single SO8 footprint. Evaluate thermal derating curves for ambient temperatures exceeding 70 °C. Verify that the gate drive voltage meets the requirements for the desired on-state resistance specification.

Part Context

This component belongs to the TrenchMOS family of power MOSFETs. It serves as a discrete solution for medium-current switching applications where dual channels are beneficial. The device utilizes trench gate technology to achieve low on-resistance and fast switching speeds within a standard plastic small outline package.

Replacement Considerations

Check for direct pin-compatible alternatives such as the PHN210T or other dual N-channel MOSFETs in the SOT96-1 package. Verify that replacement parts meet the same 30 V breakdown voltage and current handling capabilities.