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The Nexperia PHPT610030NPK-QX is an automotive-grade PNP bipolar junction transistor (BJT) designed for high-efficiency power switching applications. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 100 V, housed in the LFPAK56 (Power-SO8) surface-mount package. The device exhibits a low saturation voltage of 360 mV at 200 mA base and 2 A collector current, ensuring minimal conduction losses. With a DC current gain (hFE) minimum of 150 at 500 mA and 10 V, it provides robust drive capability. The component operates within a junction temperature range up to 175°C and meets AEC-Q101 qualification standards for automotive reliability.
Verify the specific suffix 'QX' against the manufacturer's official ordering guide to confirm tape-and-reel packaging specifications and quantity per reel. Ensure that the AEC-Q101 qualification status aligns with your project's automotive grade requirements before finalizing procurement orders.
Select this component when designing circuits requiring a 100 V PNP transistor capable of handling 3 A continuous current with low on-state resistance. The LFPAK56 package is suitable for applications demanding superior thermal performance compared to standard SOT packages. Verify that the required hFE and VCEsat parameters meet the specific efficiency targets of the target application.
This part belongs to Nexperia's portfolio of LFPAK bipolar transistors, which are optimized for automotive and industrial power applications. The LFPAK56 package offers a copper clip design for enhanced heat dissipation and electrical conductivity, distinguishing it from traditional plastic-encased transistors in similar voltage and current classes.
Publicly confirmed substitute part numbers for PHPT610030NPK-QX were not identified in the provided documentation. Engineers should consult Nexperia's official replacement matrix or datasheet cross-reference sections for verified equivalent components.