ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 2PNP 100V 3A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：3A
- Voltage - Collector Emitter Breakdown (Max)：100V
- Vce Saturation (Max) @ Ib, Ic：360mV @ 200mA, 2A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 500mA, 10V
- Power - Max：1.25W
- Frequency - Transition：125MHz
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：Automotive
- Qualification：AEC-Q100
Download product information
Overview
The Nexperia PHPT610030PK is a PNP/PNP high power double bipolar transistor housed in an SOT1205 (LFPAK56D) surface-mounted package. It features two independent PNP transistors within a single device, offering a collector-emitter voltage (VCEO) of -100 V and a continuous collector current (IC) of -3 A per transistor. The component supports junction temperatures up to 175 °C and provides a typical DC current gain (hFE) ranging from 10 to 40 at -3 A. Its thermal resistance from junction to ambient is typically 150 K/W in free air, with a total power dissipation capability of 25 W under specific mounting conditions.
Feature Summary
- High thermal power dissipation capability suitable for demanding environments
- Operational stability at elevated temperatures up to 175 °C
- Reduced printed-circuit board requirements compared to DPAK packages
- Improved energy efficiency through minimized heat generation
Applications
- Motor control systems
- Power management circuits
- Load switch implementations
- Linear mode voltage regulators
- Relay replacement applications
Procurement Notes
Verify the exact ordering suffix against the manufacturer's official documentation before purchase. Confirm that the non-automotive qualification status aligns with your project requirements, as automotive-grade alternatives may be necessary for regulated industries. Ensure compatibility with the specified LFPAK56D footprint during the procurement phase.
Selection Notes
Select this component when dual PNP configurations are required in a compact form factor. Evaluate the thermal resistance characteristics against your PCB copper area constraints to ensure adequate heat dissipation. Consider the -100 V rating and -3 A current capacity to verify suitability for your specific load switching or regulation tasks.
Part Context
This device belongs to Nexperia's high power double bipolar transistor series, designed to replace discrete solutions in space-constrained designs. It serves as the PNP variant complement to the NPN/NPN PHPT610030NK and the complementary NPN/PNP PHPT610030NPK, providing design flexibility for push-pull or bridge topologies.
Replacement Considerations
PHPT610030NK (NPN/NPN complement)
FAQ
Is the PHPT610030PK qualified for automotive applications?
No, the product data sheet explicitly states that this specific device is not automotive qualified. Customers requiring automotive reliability should consult Nexperia for alternative products designated with the '-Q' suffix.
What is the maximum junction temperature for this transistor?
The maximum operating junction temperature (Tj) is rated at 175 °C, allowing for operation in high-temperature environments.
How does the packaging compare to traditional DPAK transistors?
The LFPAK56D package reduces printed-circuit board requirements compared to transistors in DPAK packages while maintaining high thermal power dissipation capabilities.
