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The Nexperia PIMC32X is a Resistor-Equipped double Transistor (RET) featuring one NPN and one PNP transistor in an SC-74 (SOT457) surface-mount package. It provides a collector-emitter voltage of 50 V and an output current capability of 500 mA per transistor. The device integrates bias resistors with R1 at 2.2 kΩ and R2 at 10 kΩ. Key electrical characteristics include a DC current gain (hFE) of 70 minimum at 50 mA, a saturation voltage of 100 mV maximum at 50 mA, and transition frequencies of 225 MHz for the NPN section and 140 MHz for the PNP section. Total power dissipation is rated at 290 mW per transistor and 420 mW per device.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and reel specifications. Ensure that the selected variant matches the required thermal and electrical parameters for the target application environment. Cross-reference the part number with the latest datasheet revision history to confirm availability and any potential changes to pinning or marking codes before finalizing procurement orders.
Select the PIMC32X when a compact solution for complementary switching is required without external biasing components. Consider the 50 V collector-emitter voltage rating and 500 mA current limit to ensure compatibility with the load requirements. Evaluate the thermal resistance values if operating near maximum power dissipation limits. Verify that the integrated resistor values meet the input drive requirements of the controlling logic source.
The PIMC32X belongs to the PIMC32 series of Resistor-Equipped double Transistors manufactured by Nexperia. It serves as a direct replacement for discrete BC807/BC817 transistor pairs in space-constrained designs. The device utilizes the SOT457 plastic surface-mount package, offering a small footprint compared to individual discrete components while maintaining equivalent electrical performance for general-purpose switching tasks.
The PIMC32X is documented as a cost-saving alternative to the BC807 and BC817 series. Designers replacing discrete BC807/BC817 pairs should verify that the integrated resistor values (R1=2.2kΩ, R2=10kΩ) are compatible with the existing circuit biasing requirements.
The device includes a base resistor (R1) of 2.2 kΩ and an emitter resistor (R2) of 10 kΩ.
The transition frequency (fT) for the NPN transistor (TR1) is typically 225 MHz under standard test conditions.
The total power dissipation is rated at 290 mW per individual transistor and 420 mW for the entire device when mounted on an FR4 PCB.