PIMD2,115

Overview

The PIMD2,115 is a pre-biased bipolar junction transistor (BJT) array manufactured by Nexperia USA Inc. It integrates one NPN and one PNP transistor within a single surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Total power dissipation is rated at 600mW. The component utilizes the 6-TSOP package configuration.

Feature Summary

• Integrates dual pre-biased NPN and PNP transistors in a compact surface-mount package
• Includes internal base resistors to simplify circuit design and reduce component count
• Optimized for high-speed switching applications with low saturation voltage characteristics

Applications

• General-purpose switching circuits
• Logic level interface drivers
• Signal conditioning stages

Procurement Notes

Verify the specific suffix '115' to confirm the 6-TSOP package variant. Confirm RoHS compliance status for the target region. Check AEC-Q101 qualification requirements if automotive application is intended. Ensure lead frame material matches system thermal constraints.

Selection Notes

Select this component when space-constrained designs require dual transistor functionality. Compare power dissipation ratings against thermal management capabilities. Verify that the integrated resistor values meet biasing requirements for the specific logic family being driven.

Part Context

This part belongs to Nexperia's pre-biased transistor series, designed to replace discrete resistor-transistor combinations. It simplifies PCB layout by reducing the number of external components required for basic switching functions.

Replacement Considerations

NSBC124EDXV6T1G from onsemi is listed as a similar alternative. Verify pinout compatibility and electrical parameter alignment before substitution.