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The PIMD2,125 is a pre-biased bipolar junction transistor array manufactured by Nexperia. It integrates one NPN and one PNP transistor within a single surface-mount package. The device supports a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features an integrated power dissipation capacity of 600mW. Base resistors for both transistors are specified at 22 kiloohms. The component operates within a temperature range from -40°C to +125°C and utilizes the 6-TSOP package configuration.
Verify the specific ordering code against official Nexperia documentation to ensure correct package variant identification. Confirm that the requested quantity aligns with standard manufacturing reel specifications. Check for any recent product change notifications regarding pinout or electrical parameters before finalizing procurement orders.
Select this component when a compact solution requires both NPN and PNP switching capabilities with integrated biasing. Ensure the application voltage does not exceed the 50V collector-emitter rating. Verify that the thermal requirements fit within the 600mW dissipation limit for the selected PCB layout.
This part belongs to the Nexperia pre-biased transistor array family. These devices simplify circuit design by replacing discrete transistors and external base resistors. The PIMD2,125 specifically offers a higher power rating compared to lower-power variants in the same series, suitable for moderate current switching tasks.
Publicly confirmed substitute part numbers include NSBC124EDXV6T1G from onsemi. Verify pin compatibility and electrical parameter equivalence before substitution.