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The PIMH9,115 is a dual NPN pre-biased transistor array manufactured by Nexperia. It integrates two isolated NPN transistors with built-in biasing resistors into a single SOT-457 (SC-88) surface-mount package. The device supports a maximum DC collector current of 100 mA and withstands collector-emitter and collector-base voltages up to 50 V. Key electrical specifications include a minimum DC current gain (hFE) of 100 at 5 mA and 5 V, a transition frequency of 230 MHz, and a maximum power dissipation of 400 mW. The component operates within a temperature range of -55°C to +150°C and complies with AEC-Q101 automotive standards.
Verify the specific ordering suffix to confirm packaging details such as reel or cut tape quantities. Confirm RoHS compliance status and REACH registration requirements prior to integration. Ensure that the selected variant matches the required moisture sensitivity level for your assembly process. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability.
Select this component when space-constrained designs require dual NPN switching functions with fixed biasing. The SOT-457 package offers a compact footprint suitable for high-density PCB layouts. Consider the 400 mW power dissipation limit and thermal resistance characteristics during layout planning. Verify that the 50 V voltage rating exceeds the maximum operating voltage of the target application circuit.
This part belongs to the PIMH series of pre-biased transistor arrays from Nexperia. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The PIMH9 variant specifically provides dual NPN configurations with standardized resistor values, facilitating consistent performance across various digital and analog switching applications.
The IMH8AT108 from Rohm Semiconductor serves as a public confirmed substitute. Both parts offer dual NPN pre-biased configurations in similar packages with comparable electrical ratings.