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The PIMN31PAS-Q is a NPN/NPN Resistor-Equipped double Transistor (RET) from Nexperia, housed in a DFN2020D-6 (SOT1118D) leadless SMD plastic package with side-wettable flanks. It features built-in bias resistors R1 = 1 kΩ and R2 = 10 kΩ. The device supports a collector-emitter voltage of 50 V and an output current of 500 mA per transistor. Key electrical characteristics include a DC current gain (hFE) of 70 at IC = 50 mA, a transition frequency (fT) of 210 MHz, and a collector-emitter saturation voltage of 100 mV at IC = 50 mA. It is qualified according to AEC-Q101 for automotive applications.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the component marking code '8J' matches the intended revision level before finalizing procurement orders.
Select this RET for designs requiring dual NPN switching with integrated base drive resistors. Verify thermal resistance requirements based on the specific PCB copper layer configuration and footprint size to ensure operation within the 150 °C junction temperature limit.
This component belongs to Nexperia's resistor-equipped double transistor family. Complementary variants include the PNP/PNP PIMP31PAS-Q and the NPN/PNP PIMC31PAS-Q. All share similar electrical ratings but differ in internal transistor polarity configurations.
Direct functional equivalents include PIMP31PAS-Q (PNP/PNP) and PIMC31PAS-Q (NPN/PNP). For general-purpose replacements without integrated resistors, consider the BC817 series, though external components will be required.