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The PIMT1,115 is a dual PNP bipolar junction transistor array manufactured by Nexperia. It features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 100mA per transistor. The device operates within a temperature range of -55°C to +150°C and dissipates up to 600mW of power. Key electrical characteristics include a DC current gain (hFE) of 200 at 2mA and 5V, and a transition frequency (fT) of 100MHz. It is housed in a compact 6-TSOP surface-mount package.
Verify the specific suffix '115' to confirm the tape-and-reel packaging format compatible with automated assembly lines. Ensure the procurement source provides valid RoHS compliance documentation consistent with Nexperia standards. Cross-reference the manufacturer part number against official Nexperia databases to avoid counterfeit components. Confirm that the supplier can provide traceability data required for quality assurance protocols.
Select this component when a dual PNP solution is required in a small footprint. Compare the 40V rating against circuit voltage requirements to ensure adequate headroom. Evaluate the 100mA current limit against load demands. Consider the 6-TSOP package dimensions for PCB layout constraints relative to alternative packages like SOT-363.
This part belongs to Nexperia's portfolio of general-purpose discrete semiconductors. It serves as a compact alternative to using two separate single transistors. The dual configuration reduces board space and simplifies routing in dense electronic designs. It complements other NPN/PNP arrays in the product family.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs before considering alternatives.