PM75RSD120

Overview

The PM75RSD120 is a single IGBT silicon module manufactured by Mitsubishi Electric, not Powerex Inc. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A at 25°C. The saturation voltage is 2.4 V, with a power dissipation rating of 416 W. Operating temperatures range from -20°C to +150°C. The component utilizes screw mount installation within a 110 mm x 89 mm package.

Feature Summary

• Integrates an N-channel insulated gate bipolar transistor for high-power switching applications
• Includes integrated drive circuitry and protection mechanisms within the module structure
• Designed for robust thermal management in industrial environments

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Inverter systems

Procurement Notes

Verify manufacturer attribution carefully as listings may incorrectly associate this Mitsubishi part with other brands. Confirm RoHS compliance status directly with the supplier or official datasheet before procurement. Check for obsolescence notices as availability varies significantly across distributors.

Selection Notes

Select this module when a 1.2 kV rating and 75 A continuous current capacity are required. Ensure the application supports the specified 416 W power dissipation and operating temperature limits. Verify that the screw mount package dimensions fit the mechanical design constraints.

Part Context

This component belongs to the PM75RSD series of IGBT modules. It represents a standard silicon-based solution for medium-power industrial electronics. The series is designed to provide reliable performance in demanding electrical environments requiring high voltage blocking capabilities.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching voltage, current, and package specifications with verified equivalent components from official manufacturer lists.