PMB7720HV1.4510PCC

Telecom Overview

The PMB7720HV1.4510PCC is a high-voltage power MOSFET from Infineon Technologies, designed for robust switching applications requiring elevated voltage tolerance. This component features an N-channel enhancement mode configuration housed in a surface-mount package suitable for automated assembly. It provides a drain-source voltage rating of 600 V, ensuring reliable operation in high-voltage circuits. The device supports continuous drain currents up to 0.09 A at 25°C and can handle pulsed currents of 0.4 A. Key electrical parameters include a maximum on-resistance of 45000 mΩ at 10 V gate drive, typical gate charge of 3.9 nC, and a threshold voltage range between 1.3 V and 2.3 V. Thermal performance is characterized by a junction-to-ambient thermal resistance of 125 K/W, with a maximum operating temperature of 150°C.

Telecom Feature Summary

• High voltage capability with 600 V drain-source breakdown
• Small signal and small power optimization for efficient switching
• Enhanced thermal stability supporting operation up to 150°C

Telecom Applications

• High-voltage switching circuits
• Small power conversion stages
• Industrial control interfaces

Telecom Procurement Notes

Verify the specific ordering part number against the manufacturer's current catalog to ensure compatibility with required packaging and tape-and-reel specifications. Confirm that the component meets all relevant automotive or industrial qualification standards if applicable to the target design environment. Check for any recent lifecycle status updates to ensure long-term availability for production.

Telecom Selection Notes

Select this component when a 600 V rated N-channel MOSFET is required for low-current switching tasks. Consider the 45000 mΩ on-resistance for efficiency calculations in low-power applications. Ensure the gate drive voltage aligns with the specified threshold range of 1.3 V to 2.3 V for optimal turn-on characteristics. Evaluate the thermal management requirements based on the 125 K/W junction-to-ambient resistance.

Telecom Part Context

This part belongs to Infineon's portfolio of high-voltage discrete semiconductors. It complements other small-signal MOSFETs offering similar voltage ratings but different current capabilities. The component is distinct from lower-voltage logic-level devices due to its specialized insulation and breakdown characteristics tailored for high-potential isolation needs.

Telecom Replacement Considerations

Consult official substitution guides for equivalent 600 V N-channel MOSFETs with comparable RDS(on) and current ratings. Verify pinout compatibility and package dimensions before replacing the original component in existing designs.