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The PMBD7100,215 is a high-speed double diode from Nexperia featuring two common-cathode switching diodes in an SOT-23 package. It supports a repetitive peak reverse voltage of 100 V and a continuous forward current up to 215 mA per diode when singly loaded. The device exhibits a maximum reverse recovery time of 4 ns and a low junction-to-ambient thermal resistance of 500 K/W. Operating temperatures range from -65 °C to +150 °C, with a total power dissipation limit of 250 mW at 25 °C ambient.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm tape-and-reel packaging quantities and manufacturing origin codes. Ensure that the component status aligns with current production schedules before finalizing procurement plans. Cross-reference the datasheet revision history to validate that all limiting values and electrical characteristics match the intended design requirements.
Select this component for designs requiring dual independent switching paths within a minimal footprint. The common cathode arrangement simplifies circuit topology compared to discrete single diodes. Evaluate the thermal constraints carefully, as the 250 mW dissipation limit requires adequate PCB copper area for heat spreading to maintain safe junction temperatures under continuous load conditions.
This device belongs to the PMBD series of high-speed switching diodes manufactured by Nexperia. It utilizes planar technology to achieve rapid switching performance suitable for modern digital and analog signal applications. The SOT-23 package provides a standardized form factor compatible with automated surface-mount assembly processes widely used in consumer and industrial electronics manufacturing.
PMBD7000,215
Pin 1 is Anode 1 (a1), Pin 2 is Anode 2 (a2), and Pin 3 serves as the common connection.
When a single diode is loaded, the maximum continuous forward current is 215 mA. When both diodes are loaded simultaneously, the rating decreases to 125 mA per diode.
The diode capacitance is typically 1.5 pF when measured at 0 V reverse voltage and 1 MHz frequency.