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Product Detailed Parameters
- Description：JFET P-CH 30V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：1.5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：8pF @ 10V (VGS)
- Resistance - RDS(On)：300 Ohms
- Power - Max：300 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBFJ177,215 is a P-channel silicon junction field-effect transistor (JFET) manufactured by NXP Semiconductors. It is housed in a plastic microminiature SOT-23 surface-mount package with three leads. The device features symmetrical construction allowing interchangeable drain and source connections. Key electrical specifications include a maximum drain-source voltage of 30 V and a gate-source breakdown voltage of 30 V. At a drain-source voltage of -15 V and zero gate-source voltage, the typical drain current is 20 mA, with a range of 1.5 to 20 mA. The typical drain-source on-resistance is 300 Ω at -0.1 V and zero gate bias.
Feature Summary
- Symmetrical p-channel junction FET design enabling interchangeable drain and source terminals for flexible circuit layout.
Applications
- Analogue switches
- Choppers
- Commutators
Procurement Notes
Verify the component authenticity against the official NXP datasheet revision 3.0 dated January 24, 2020. Confirm the marking code corresponds to '6Y' prefixed by the manufacturing site identifier. Ensure the ordering suffix matches the specified tape-and-reel packaging configuration for the SOT-23 envelope.
Selection Notes
Select this component when a low-current P-channel JFET is required for analogue signal routing or switching applications. The specific drain current and on-resistance characteristics distinguish it from other variants in the PMBFJ174 through PMBFJ177 series. Verify that the 300 Ω on-resistance aligns with the load requirements of the target circuit design.
Part Context
This part belongs to the PMBFJ174/175/176/177 family of P-channel silicon field-effect transistors. All members share identical physical packages, pin configurations, and general descriptions but differ in their specific static electrical parameters, particularly drain current and on-resistance values.
Replacement Considerations
Direct substitutes within the same family include PMBFJ174, PMBFJ175, and PMBFJ176. Note that these alternatives possess different drain current and resistance specifications compared to the PMBFJ177.
FAQ
Are the drain and source pins distinct on the PMBFJ177?
No, the device features a symmetrical structure where the drain and source connections are interchangeable.
What is the maximum allowable gate-source voltage?
The maximum gate-source breakdown voltage is rated at 30 V.
How does the PMBFJ177 differ from the PMBFJ174?
While they share the same package and general description, the PMBFJ177 has a lower typical drain current (20 mA vs 135 mA) and higher on-resistance (300 Ω vs 85 Ω).
