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The PMBT3946YPN is a general-purpose NPN/PNP double transistor manufactured by Nexperia in a SOT363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 40 V and a continuous collector current of 200 mA per transistor. The device has a total power dissipation of 350 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 for the NPN transistor at IC = 10 mA, and a transition frequency (fT) of 300 MHz. The component is qualified under AEC-Q101 standards.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact reel or cut-tape configuration intended for procurement. Confirm RoHS compliance status directly with the supplier prior to purchase. Ensure that the marking code matches the expected manufacturing site code indicated in the datasheet to validate authenticity.
Select this component when space-constrained designs require dual complementary transistors in a single package. Verify that the required collector current does not exceed 200 mA and that the operating voltage remains within the 40 V limit. Consider the thermal resistance values if high-power dissipation is anticipated in the application environment.
This part belongs to the PMBT3946 series of general-purpose double transistors. Complementary configurations are available as the PMBT3904YS (NPN/NPN) and PMBT3906YS (PNP/PNP). The device utilizes silicon technology and is designed for use in standard FR4 printed-circuit boards with tin-plated copper footprints.
Direct substitutes include PMBT3946YPN,125 and PMBT3946YPN,135. These variants share identical electrical specifications and pinout configurations but may differ in packaging quantities or manufacturing origin codes.