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The PMD9001D is an NPN Resistor-Equipped Transistor (RET) MOSFET driver housed in a SOT457 (SC-74) TSOP6 package. It integrates two transistors and one high-speed switching diode in a totem pole configuration. Key electrical parameters include a collector current of 0.1 A, collector-emitter voltage of 45 V, and peak collector current of 0.2 A. The device features internal bias resistors with a typical value of 2.2 kΩ and a ratio of 1. Switching characteristics at IC=0.05 A and IB=2.5 mA include a turn-on time of 65 ns and turn-off time of 1307 ns.
Verify the manufacturer status as the original NXP Standard Product business transitioned to Nexperia in February 2017. Confirm that documentation references align with the current entity. Ensure the specific ordering suffix matches the required packing method, such as tape and reel configurations, before finalizing procurement orders.
Select this component for designs requiring a compact MOSFET driver with integrated biasing. Consider the SOT457 package dimensions for PCB space constraints. Evaluate the thermal resistance values against the expected ambient temperature and power dissipation requirements to ensure reliable operation within the specified junction temperature limits.
This component belongs to the family of NPN Resistor-Equipped Transistors (RETs). These devices are designed to simplify circuit layouts by replacing multiple discrete components with a single integrated solution. The PMD9001D specifically targets applications needing fast switching capabilities and reduced bill-of-materials complexity.
Check for equivalent RET devices from Nexperia or other manufacturers offering similar totem pole configurations and SOT457 packaging. Verify pin compatibility and electrical parameter alignment, particularly collector current and voltage ratings, before substituting.
It contains two NPN transistors and one high-speed switching diode connected in a totem pole configuration.
It uses the SOT457 (SC-74) plastic surface-mounted device package, also known as TSOP6.
The internal resistors provide biasing for the transistors, reducing the need for external components and simplifying the circuit design.