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Product Detailed Parameters
- Description：IC MOSFET DRIVER 6TSOP
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Totem Pole)
- Applications：MOSFET Driver
- Voltage - Rated：50V NPN, 45V NPN
- Current Rating (Amps)：100mA NPN, 100mA NPN
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：SC-74
Download product information
Overview
The PMD9003D is a NPN Resistor-Equipped Transistor (RET) configured as a MOSFET driver. It integrates an NPN general-purpose transistor and a high-speed switching diode in a totem pole arrangement within a SOT457 (SC-74) TSOP6 package. The device features a collector current of 0.1 A, a collector-emitter voltage of 45 V, and a peak collector current of 0.2 A. Internal bias resistors minimize layout effort.
Feature Summary
- Totem pole configuration with integrated NPN transistor and high-speed switching diode
- Application-optimized pinout reduces component count and layout complexity
- Internal connections designed to minimize PCB space requirements
Applications
- MOSFET driver circuits
Procurement Notes
Verify the manufacturer designation on the datasheet header, as the product business transitioned from NXP Semiconductors to Nexperia B.V. Ensure the ordering code matches the specific tape and reel packing method required for the production line. Confirm that the SC-74 package dimensions align with the target footprint specifications.
Selection Notes
Select this component when a compact solution for driving MOSFET gates is required. The internal resistor network simplifies circuit design by reducing external part counts. Consider the thermal resistance characteristics relative to the expected ambient temperature and duty cycle to ensure reliable operation within the specified junction temperature limits.
Part Context
This component belongs to the family of Resistor-Equipped Transistors (RETs). These devices combine discrete semiconductor elements into single packages to optimize board space. The PMD9003D specifically targets applications requiring fast switching capabilities with minimal external components, serving as a dedicated interface between logic outputs and power switches.
Replacement Considerations
PMD9002D
FAQ
What is the internal configuration of the PMD9003D?
It consists of an NPN transistor and a high-speed switching diode connected in a totem pole configuration.
What package type does the PMD9003D use?
It utilizes the SOT457 plastic surface-mounted device package, also known as SC-74 or TSOP6.
What is the maximum collector-emitter voltage for Transistor 2?
The maximum collector-emitter voltage for Transistor 2 is 45 V.
