PMP4501G,135

Overview

The PMP4501G,135 is an NPN/NPN matched double transistor manufactured by Nexperia (formerly NXP) in a SOT353 (SC-88A) plastic surface-mounted package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA per transistor. The DC current gain (hFE) ranges from 200 to 450 at IC = 2 mA. Key electrical characteristics include a collector-base cut-off current (ICBO) of 15 nA at 30 V, a transition frequency (fT) of 100–250 MHz, and a total power dissipation (Ptot) of 300 mW per device at 25 °C ambient temperature. The junction temperature maximum is 150 °C.

Feature Summary

• Current gain matching between the two transistors
• Base-emitter voltage matching for precision applications
• Application-optimized pinout configuration

Applications

• Current mirror circuits
• Differential amplifier stages

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select the PMP4501G variant when a 5-lead SC-88A footprint is required instead of the standard 6-lead SOT666 or SOT363 packages. Ensure the design accommodates the common emitter configuration available for this specific package type. Confirm that the thermal resistance of 625 K/W per transistor meets the system's heat dissipation requirements under operating conditions.

Part Context

This component belongs to the PMP4501 family of matched double transistors, which also includes the PMP4501V (SOT666) and PMP4501Y (SOT363). The PMP4501G specifically utilizes the SOT353 package, offering a distinct pinout compared to its siblings. It serves as the NPN counterpart to the PNP/PNP matched pair, the PMP5501G.

Replacement Considerations

Direct functional substitutes within the same package include the PMP4501V or PMP4501Y if the PCB footprint allows for adaptation. For different packages, consider the PMP4501QASZ (DFN1010B-6) for space-constrained designs requiring AEC-Q101 qualification.