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Product Detailed Parameters
- Description：TRANS 2PNP 45V 100MA 6-TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual) Matched Pair
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：300mW
- Frequency - Transition：175MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：-
- Qualification：-
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Overview
The PMP5201Y,115 is a PNP/PNP matched double transistor manufactured by Nexperia in a SOT363-3 (TSSOP6) surface-mount package. It features a collector-emitter voltage of -45 V and a maximum collector current of -100 mA per transistor. The device offers a DC current gain ranging from 200 to 450 at -2 mA. Key matching specifications include a current gain ratio of 0.98 to 1.02 and a base-emitter voltage difference within ±2 mV. Total power dissipation is rated at 300 mW, with an operating temperature range from -65 °C to +150 °C.
Feature Summary
- Current gain matching between transistors
- Base-emitter voltage matching
- Application-optimized pinout
Applications
- Current mirror
- Differential amplifier
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration. Confirm that the component status remains active for new designs before finalizing procurement plans. Ensure compliance with RoHS directives as specified in the product data sheet.
Selection Notes
Select this component when precise matching between dual PNP transistors is required for analog circuits. The SOT363-3 package provides a compact footprint suitable for space-constrained designs. Evaluate thermal resistance characteristics if operation near maximum power dissipation limits is anticipated.
Part Context
This part belongs to Nexperia's portfolio of matched double transistors. It serves as the PNP/PNP complement to the NPN/NPN PMP4201Y. The device utilizes silicon technology and is designed for general-purpose switching and amplification applications requiring high matching accuracy.
Replacement Considerations
The PMP5201V is a functional equivalent available in the SOT666 package. Designers must account for differences in pinout configurations and physical dimensions when substituting between these package types.
FAQ
What is the maximum total power dissipation for the PMP5201Y?
The total power dissipation for the device is 300 mW when mounted on an FR4 printed-circuit board at an ambient temperature of 25 °C or lower.
How is the base-emitter voltage matching defined?
The base-emitter voltage matching (VBE1−VBE2) is specified to be within ±2 mV under conditions of VCE = -5 V, IC = -2 mA, and Tamb = 25 °C.
What are the limiting values for collector-base voltage?
The maximum collector-base voltage (VCBO) with the emitter open is -50 V.
