PMPB48EPAX

Single FETs, MOSFETs Overview

The Nexperia PMPB48EPAX is a single P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020MD-6 (SOT1220) plastic package measuring 2 x 2 x 0.65 mm. The device supports a drain-source voltage of -30 V and a continuous drain current of -4.7 A at 25 °C. Key electrical characteristics include a maximum on-state resistance of 50 mΩ at VGS = -10 V and ID = -4.7 A, with a total gate charge of 26 nC. It operates within a junction temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• Trench MOSFET technology for optimized performance
• Side wettable flanks enabling optical solder inspection
• Leadless ultra-thin SMD plastic package design
• Qualified for automotive applications per AEC-Q101

Single FETs, MOSFETs Applications

• Relay driver circuits
• High-speed line drivers
• High-side load switches
• General switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging configuration and marking codes. Ensure the component version matches the required production data sheet status. Confirm that the DFN2020MD-6 footprint aligns with the intended PCB layout specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact P-channel switch with low on-state resistance. The exposed drain pad facilitates efficient thermal dissipation through the printed circuit board. Verify that the gate drive voltage meets the minimum requirements for optimal RDSon performance. Consider the AEC-Q101 qualification if the application targets automotive environments.

Single FETs, MOSFETs Part Context

This part belongs to the PMPB48 family of P-channel Trench MOSFETs from Nexperia. The family utilizes advanced trench technology to achieve low resistance in small packages. The DFN2020MD-6 package provides a balance between power handling capabilities and minimal surface area consumption for portable and high-density electronic designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the -30V rating, -4.7A current capacity, and DFN2020MD-6 package. Verify pinout compatibility and thermal resistance values. Cross-reference with other P-channel MOSFETs offering similar RDSon characteristics and gate charge profiles.