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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 11.6A 8TSSOP
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：11.6A
- Rds On (Max) @ Id, Vgs：18.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：700mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：22.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1450pF @ 16V
- Power - Max：4.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
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Overview
The PMWD15UN,518 is a dual N-channel MOSFET array manufactured by NXP Semiconductors. It features an absolute maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 11.6 A. The device is housed in an 8-TSSOP surface-mount package with an exposed pad for thermal management. It offers a power dissipation rating of 4.2 W. This component is designed for general-purpose switching applications requiring low on-resistance and high current handling capabilities within the specified voltage limits.
Feature Summary
- Dual N-channel configuration for efficient circuit design
- High current handling capability up to 11.6 A
- Low on-resistance for improved power efficiency
- Surface-mount packaging for automated assembly
Applications
- General-purpose switching circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the exact part number PMWD15UN,518 against official NXP documentation to ensure compatibility. Confirm that the 20 V voltage rating and 11.6 A current specifications meet your system requirements. Check for RoHS compliance status if required by your manufacturing standards. Ensure the 8-TSSOP package dimensions align with your PCB footprint design. Validate thermal performance expectations based on the 4.2 W dissipation rating.
Selection Notes
Select this component when a dual N-channel MOSFET array is required for 20 V systems. Consider the 11.6 A current capacity for load switching needs. Evaluate the 8-TSSOP package suitability for your assembly process. Compare thermal resistance characteristics against alternative packages. Verify gate charge parameters for switching speed requirements in your specific application context.
Part Context
This part belongs to NXP's discrete semiconductor portfolio, specifically within the MOSFET arrays category. It complements other similar devices like the PMWD26UN,518 which offers different current ratings. These components are widely used in consumer electronics and industrial control systems where reliable switching is essential. The TSSOP-8 package provides a compact solution for space-constrained designs.
Replacement Considerations
Check NXP's official replacement guides for direct substitutes. Verify pinout compatibility before swapping with similar MOSFET arrays. Ensure voltage and current ratings of alternatives meet or exceed original specifications. Review thermal performance data for equivalent packages. Confirm availability from authorized distributors for supply chain stability.
