SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PN4392_D26Z is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is a single-element silicon device housed in a TO-92 package. Key electrical specifications include a gate-source breakdown voltage of 40 V, a drain-source cutoff voltage of 5 V, and a zero-gate-voltage drain current of 75 mA. The device exhibits a maximum drain-source on-resistance of 60 Ohms and a power dissipation rating of 625 mW. It operates within a temperature range of -65°C to +150°C.
Verify the manufacturer designation carefully, as the PN4392 part number has been produced by multiple vendors including Central Semiconductor and Rochester Electronics. Confirm that the specific D26Z suffix aligns with onsemi's packaging and marking requirements. Request the official datasheet from onsemi directly to validate pinout compatibility and electrical tolerances before integration into designs.
Select this component when an N-channel depletion-mode FET is required for low-power analog applications. Ensure the circuit design accommodates the specified 40V gate-source breakdown and 625mW power dissipation limits. Verify that the TO-92 package dimensions fit the available board space and that the operating temperature range meets environmental constraints.
The PN4392 series represents a standard small-signal N-channel JFET widely used in discrete transistor circuits. While originally associated with other manufacturers, onsemi provides this component as part of their discrete semiconductor portfolio. The device serves as a fundamental building block for analog signal conditioning and switching tasks requiring high input impedance.
Cross-reference with PN4392 variants from other manufacturers such as Central Semiconductor or Rochester Electronics. Verify that alternative sources match the exact electrical parameters, particularly the 75mA drain current and 60 Ohm resistance values, to ensure functional equivalence.