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The PQMD13 is an NPN/PNP double Resistor-Equipped Transistor (RET) housed in a leadless DFN1010B-6 (SOT1216) package. It features built-in bias resistors with R1 at 4.7 kΩ and R2 at 47 kΩ, providing a typical ratio of 10. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and an output current capability of 100 mA per transistor. Total power dissipation reaches 350 mW at 25 °C ambient temperature. Transition frequencies are rated at 230 MHz for the NPN section and 180 MHz for the PNP section. The component is AEC-Q101 qualified and operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested part matches the DFN1010B-6 package variant. Cross-reference the marking code 'B' on the component body to validate authenticity. Ensure compliance with RoHS directives before final procurement approval.
Select this RET when space constraints require an ultra-thin profile or when minimizing board space is critical. The integrated resistor network reduces assembly costs by eliminating external bias components. Verify that the 50 V voltage rating and 100 mA current limits meet the specific load requirements of the target application circuit.
This component belongs to Nexperia's PQM series of dual resistor-equipped transistors. It serves as the NPN/PNP complement to the PQMH13 (NPN/NPN) variant. The device utilizes Trench MOSFET technology principles adapted for bipolar structures within a leadless plastic SMD package designed for high thermal efficiency.
Direct functional equivalents include the PQMH13 for NPN/NPN configurations. Designers replacing discrete BC847/BC857 pairs should verify pin compatibility and resistor values. No other specific substitute part numbers are documented in the provided datasheet.