PQMD13Z

PQMD13Z

$0.26
  • Description:TRANS PREBIAS 1NPN 1PNP 50V 6DFN
  • Series:-

SKU:835069f8f06b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP 50V 6DFN
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:230MHz, 180MHz
  • Power - Max:350mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN Exposed Pad
  • Supplier Device Package:DFN1010B-6

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PQMD13Z

Overview

The PQMD13 is an NPN/PNP double Resistor-Equipped Transistor (RET) housed in a leadless DFN1010B-6 (SOT1216) package. It features built-in bias resistors with R1 at 4.7 kΩ and R2 at 47 kΩ, providing a typical ratio of 10. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and an output current capability of 100 mA per transistor. Total power dissipation reaches 350 mW at 25 °C ambient temperature. Transition frequencies are rated at 230 MHz for the NPN section and 180 MHz for the PNP section. The component is AEC-Q101 qualified and operates within a junction temperature range up to 150 °C.

Feature Summary

  • Integrated bias resistors simplify circuit design and reduce component count
  • Ultra-thin package height of 0.37 mm enables compact layouts
  • Qualified for automotive applications under AEC-Q101 standards

Applications

  • Low current peripheral driver circuits
  • Control of IC inputs
  • Replacement for general-purpose transistors in digital applications
  • Mobile electronic devices

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested part matches the DFN1010B-6 package variant. Cross-reference the marking code 'B' on the component body to validate authenticity. Ensure compliance with RoHS directives before final procurement approval.

Selection Notes

Select this RET when space constraints require an ultra-thin profile or when minimizing board space is critical. The integrated resistor network reduces assembly costs by eliminating external bias components. Verify that the 50 V voltage rating and 100 mA current limits meet the specific load requirements of the target application circuit.

Part Context

This component belongs to Nexperia's PQM series of dual resistor-equipped transistors. It serves as the NPN/PNP complement to the PQMH13 (NPN/NPN) variant. The device utilizes Trench MOSFET technology principles adapted for bipolar structures within a leadless plastic SMD package designed for high thermal efficiency.

Replacement Considerations

Direct functional equivalents include the PQMH13 for NPN/NPN configurations. Designers replacing discrete BC847/BC857 pairs should verify pin compatibility and resistor values. No other specific substitute part numbers are documented in the provided datasheet.

PQMD13ZPQMD13Z
$0.26
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