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The PQMD16 is an NPN/PNP double Resistor-Equipped Transistor (RET) housed in a leadless DFN1010B-6 (SOT1216) package. It integrates two transistors with built-in bias resistors, R1 = 22 kΩ and R2 = 47 kΩ. The device supports a collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation reaches 350 mW at 25 °C ambient temperature. The package height is 0.37 mm, and the unit is qualified to AEC-Q101 standards for automotive reliability.
Verify the specific ordering suffix against the manufacturer's official database to confirm availability status and packaging configuration. Ensure that the selected variant matches the required thermal and electrical specifications for the target application environment before finalizing procurement orders.
Select this component when circuit design requires integrated biasing to minimize board space and assembly steps. Verify that the 50 V collector-emitter voltage and 100 mA output current limits accommodate the maximum expected load conditions. Confirm compatibility with the DFN1010B-6 footprint during the PCB layout phase.
This part belongs to Nexperia's family of resistor-equipped transistors designed to simplify digital switching circuits. By combining transistors and bias resistors into a single surface-mount package, it reduces the overall bill of materials and simplifies automated pick-and-place manufacturing processes compared to discrete component solutions.
Direct replacements must match the DFN1010B-6 package dimensions and pinout. Verify equivalent R1 (22 kΩ) and R2 (47 kΩ) values and ensure the substitute meets the 50 V voltage rating and 100 mA current capability requirements.