PQMD2Z

PQMD2Z

$0.26
  • Description:TRANS PREBIAS 1NPN 1PNP 50V 6DFN
  • Series:-

SKU:136086918993 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP 50V 6DFN
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:230MHz, 180MHz
  • Power - Max:230mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN Exposed Pad
  • Supplier Device Package:DFN1010B-6

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PQMD2Z

Overview

The PQMD2Z is a dual NPN/PNP resistor-equipped transistor (RET) in a SOT363 plastic surface-mount package. It integrates two transistors with built-in bias resistors, R1 and R2, each valued at 100 kΩ. The device provides a combined output current capability of 100 mA. It operates within an ambient temperature range of -55 °C to +150 °C. The component features ESD protection rated at HBM Class 2 (2000 V) and CDM Class C3 (1000 V). Electrical characteristics include a DC current gain (hFE) ranging from 100 to 200 for the NPN section and 100 to 200 for the PNP section under specified conditions.

Feature Summary

  • Dual configuration combining NPN and PNP transistors with integrated base resistors
  • High thermal stability supporting operation up to 150 °C junction temperature
  • Robust electrostatic discharge protection compliant with ANSI/ESDA/JEDEC standards

Applications

  • Low current peripheral driver circuits
  • Control of IC inputs in digital logic interfaces
  • Replacement for general-purpose discrete transistors in space-constrained mobile applications

Procurement Notes

Verify the specific ordering code suffix against the official Nexperia datasheet to confirm the exact resistor values and package variant. Ensure the procurement channel is an authorized distributor to guarantee authenticity and traceability. Check the Longevity Program status for expected availability duration before finalizing supply chain agreements.

Selection Notes

Select this component when circuit design requires both NPN and PNP switching functions with minimal external passive components. The 100 kΩ internal resistors simplify biasing networks compared to discrete alternatives. Verify that the 100 mA total current rating meets the load requirements for both channels simultaneously during peak operation.

Part Context

This part belongs to Nexperia's family of Resistor-Equipped Transistors (RETs), designed to reduce bill-of-materials count and assembly costs. It utilizes the compact SOT363 package, which is suitable for high-density PCB layouts common in modern consumer electronics and portable devices requiring efficient space utilization.

Replacement Considerations

Direct substitutes must match the SOT363 package, dual RET topology, and 100 kΩ resistor values. Verify pinout compatibility and electrical parameters such as hFE ranges and maximum voltage ratings. Cross-reference with other manufacturers' dual RET offerings ensuring identical functional specifications.

FAQ

What are the specific resistance values for the built-in bias resistors?

Both the NPN and PNP sections feature built-in bias resistors with a value of 100 kΩ.

Is the PQMD2Z qualified for automotive applications?

Yes, the component is AEC-Q101 qualified, making it suitable for automotive environments.

What is the maximum operating junction temperature?

The device is specified for an ambient temperature range up to 150 °C, indicating robust thermal performance.

PQMD2ZPQMD2Z
$0.26
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