PQMH10Z

Overview

The PQMH10Z is an NPN/NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia, housed in a leadless DFN1010B-6 (SOT1216) package. It integrates two NPN transistors with built-in bias resistors: R1 = 2.2 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current (IO) of 100 mA, and a total power dissipation of 350 mW per device at 25 °C. The component features a low profile height of 0.37 mm and is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to simplify circuit design and reduce component count.
• Features a leadless ultra-small DFN1010B-6 package with a low profile height of 0.37 mm to minimize board space and pick-and-place costs.
• Qualified to AEC-Q101 standards, ensuring suitability for thermally demanding environments and automotive critical applications.

Applications

• Low current peripheral driver
• Control of IC inputs
• Replaces general-purpose transistors in digital applications
• Mobile applications

Procurement Notes

Verify the specific ordering suffix 'Z' against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the procurement channel provides valid traceability and authenticity guarantees for Nexperia components. Confirm that the delivered part matches the DFN1010B-6 package outline and marking code 'A' to avoid counterfeit risks.

Selection Notes

Select the PQMH10Z when a compact dual NPN solution with integrated biasing is required for space-constrained designs. The 2.2 kΩ input resistor value should be evaluated against the driving source impedance to ensure proper saturation. Consider the 50 V collector-emitter voltage rating and 100 mA current capability relative to the load requirements. Verify thermal management needs based on the 350 mW power dissipation limit in free air.

Part Context

The PQMH10 belongs to Nexperia's family of NPN/PNP Resistor-Equipped Transistors designed to replace multiple discrete components. It serves as the NPN/NPN variant, with the PMH/PMP series offering complementary P-channel MOSFET options. This component type is specifically engineered to reduce assembly complexity and cost in portable and automotive electronics through high integration density.

Replacement Considerations

The datasheet identifies the PQMD10 as the NPN/PNP complement within the same product family. Designers replacing discrete transistor pairs should verify pin compatibility and resistor values. No other specific substitute part numbers are documented in the provided source material.

FAQ

What are the specific values of the built-in bias resistors?

The PQMH10 contains two NPN transistors with built-in bias resistors where R1 (input) is 2.2 kΩ and R2 is 47 kΩ.

Is this component suitable for automotive applications?

Yes, the PQMH10 is qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) with an open base is 50 V.