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The PQMH11 is an NPN/NPN Resistor-Equipped Transistor (RET) housed in a leadless DFN1010B-6 (SOT1216) package. It features two integrated NPN transistors with built-in bias resistors, where R1 equals 10 kΩ and the R2/R1 ratio is nominally 1. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Total power dissipation reaches 350 mW at temperatures up to 25 °C. The component operates within an ambient temperature range of -55 °C to 150 °C and is qualified under AEC-Q101 standards.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape configuration. Confirm that the requested revision level matches the latest product data sheet version to ensure compatibility with current manufacturing processes and specifications.
Select this component when space constraints require a leadless ultra-small outline package. Ensure the application utilizes NPN logic compatible with the specified 10 kΩ input bias resistor. Verify that the required collector-emitter voltage does not exceed 50 V and that thermal management accommodates the 350 mW total power dissipation limit on standard FR4 substrates.
The PQMH11 belongs to Nexperia's PQM series of resistor-equipped transistors designed for compact surface-mount applications. It serves as the NPN/NPN variant within this family, offering complementary options including PNP/PNP (PQMB11) and NPN/PNP (PQMD3) configurations for diverse logic interface requirements.
Publicly confirmed substitutes include the PQMB11 for PNP/PNP functionality and the PQMD3 for NPN/PNP complementarity. Direct pin-compatible replacements from other manufacturers are not explicitly documented in the provided datasheet.