PQMH13-QZ

PQMH13-QZ

$0.26
  • Description:PQMH13-Q/SOT1216/DFN1010B-6
  • Series:-

SKU:d6b5e27df919 Category: Brand:

  
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Product Detailed Parameters

  • Description:PQMH13-Q/SOT1216/DFN1010B-6
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:230MHz
  • Power - Max:230mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN Exposed Pad
  • Supplier Device Package:DFN1010B-6

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PQMH13-QZ

Overview

The PQMH13-Q is an NPN/NPN Resistor-Equipped Transistor (RET) housed in a leadless DFN1010B-6 (SOT1216) package. It integrates two NPN transistors with built-in bias resistors, where R1 is 4.7 kΩ and R2 is 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Key electrical parameters include a DC current gain (hFE) of at least 100 at 10 mA, a transition frequency (fT) of 230 MHz, and a total power dissipation of 350 mW. Qualified under AEC-Q101, it operates within a junction temperature range up to 150 °C.

Feature Summary

  • Integrates dual NPN transistors with fixed internal bias resistors to reduce external component count
  • Ultra-thin leadless DFN1010B-6 package design minimizes footprint and pick-and-place costs
  • Automotive-grade qualification ensures reliability for demanding environmental conditions

Applications

  • Low current peripheral driver circuits
  • Control of IC inputs
  • Mobile applications

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm availability and exact specifications. Confirm that the requested part matches the PQMH13-Q product data sheet requirements. Ensure compliance with automotive application guidelines if used in such environments. Check for any recent updates or changes to the product status before finalizing procurement decisions.

Selection Notes

Select this component when space constraints require a compact solution for driving low-current loads or controlling logic inputs. The integrated resistor network simplifies circuit design by eliminating external biasing components. Consider the 50 V voltage rating and 100 mA current limit to ensure suitability for the intended load conditions.

Part Context

This device belongs to the PQMH series of NPN/NPN resistor-equipped double transistors from Nexperia. It shares the same DFN1010B-6 package form factor as other members like the PQMH9 and PQMH10Z but differs in internal resistor values and transistor configurations. The series is designed for applications requiring high integration density and simplified board layouts.

Replacement Considerations

Direct substitutes may include other PQMH series variants with similar pinouts and package dimensions, such as PQMH9 or PQMH10Z, provided their internal resistor values meet the circuit requirements. Verify compatibility regarding voltage ratings, current capabilities, and thermal performance before substitution.

PQMH13-QZPQMH13-QZ
$0.26
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