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The PQMH13 is an NPN/NPN Resistor-Equipped Transistor (RET) in a leadless DFN1010B-6 (SOT1216) package. It features built-in bias resistors with R1 = 4.7 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, output current (IO) of 100 mA, and total power dissipation (Ptot) of 230 mW per transistor or 350 mW per device at Tamb ≤ 25 °C. The junction temperature range is -55 °C to 150 °C. DC current gain (hFE) is typically 100 at IC = 10 mA.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the non-automotive qualification status aligns with the target application requirements before finalizing procurement orders.
Select this component when a compact dual NPN configuration with integrated base resistors is required. Ensure the 50 V voltage rating and 100 mA current capability meet the load requirements. Verify thermal management needs as the total power dissipation is limited by the small package size.
This part belongs to Nexperia's resistor-equipped transistor family, designed to replace multiple discrete components. It serves as an NPN/NPN complement to other RET types like the PQMD13 (NPN/PNP). The DFN1010B-6 package provides a small footprint suitable for modern surface-mount assembly processes.
Direct functional substitutes within the same series include parts with identical pinouts and resistor values. Check for automotive-qualified alternatives if the application requires AEC-Q101 compliance, as this specific version is not automotive qualified.
No, the PQMH13 is not automotive qualified. Customers requiring automotive-grade components should consult Nexperia for specific automotive-qualified alternatives.
The device includes two bias resistors: R1 is 4.7 kΩ and R2 is 47 kΩ.
The total power dissipation is 230 mW per transistor and 350 mW per device when the ambient temperature is 25 °C or lower.