PQMH9Z

PQMH9Z

$0.03
  • Description:Digital BJT 2 NPN - Pre-Biased (
  • Series:-

SKU:37c5d9a103f8 Category: Brand:

  
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Product Detailed Parameters

  • Description:Digital BJT 2 NPN - Pre-Biased (
  • Series:-
  • Mfr:NXP Semiconductors
  • Package:Bulk
  • Transistor Type:2 NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:230MHz
  • Power - Max:230mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN Exposed Pad
  • Supplier Device Package:DFN1010B-6

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PQMH9Z

Overview

The PQMH9Z is a dual NPN pre-biased bipolar junction transistor array manufactured by NXP Semiconductors. It integrates two NPN transistors with built-in bias resistors in a compact DFN1010B-6 surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. Internal resistor values are specified as R1 = 10 kOhm and R2 = 47 kOhm. Operating at a maximum power dissipation of 230mW, it supports frequencies up to 230MHz. This component is designed for efficient switching applications requiring minimal external circuitry.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to reduce component count
  • Utilizes leadless ultra-small DFN1010B-6 surface-mount plastic package for space efficiency
  • Supports high-frequency operation up to 230MHz for signal processing tasks

Applications

  • General-purpose signal switching circuits
  • Driver stages for low-power loads
  • Logic level translation interfaces

Procurement Notes

Verify the specific suffix Z against official NXP documentation to confirm exact internal resistor tolerances and pinout configuration. Ensure the DFN1010B-6 package dimensions align with PCB footprint requirements. Confirm automotive grade status if required for the target application environment.

Selection Notes

Select this component when space constraints necessitate a small surface-mount package. Choose the PQMH9Z for applications requiring dual NPN switching with integrated biasing. Consider the 50V breakdown voltage and 100mA current limits to ensure adequate headroom for the intended load conditions.

Part Context

This part belongs to the family of resistor-equipped transistors (RET) offered by NXP Semiconductors. These devices combine standard bipolar transistors with precision resistors to simplify circuit design. The PQMH9Z specifically provides a dual NPN configuration suitable for compact electronic designs.

Replacement Considerations

Cross-reference with PUMH9 series variants from NXP or Nexperia for compatible dual NPN pre-biased alternatives. Verify pin compatibility and electrical specifications before substitution.

PQMH9ZPQMH9Z
$0.03
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