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The PQMH9Z is a dual NPN pre-biased bipolar junction transistor array manufactured by NXP Semiconductors. It integrates two NPN transistors with built-in bias resistors in a compact DFN1010B-6 surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. Internal resistor values are specified as R1 = 10 kOhm and R2 = 47 kOhm. Operating at a maximum power dissipation of 230mW, it supports frequencies up to 230MHz. This component is designed for efficient switching applications requiring minimal external circuitry.
Verify the specific suffix Z against official NXP documentation to confirm exact internal resistor tolerances and pinout configuration. Ensure the DFN1010B-6 package dimensions align with PCB footprint requirements. Confirm automotive grade status if required for the target application environment.
Select this component when space constraints necessitate a small surface-mount package. Choose the PQMH9Z for applications requiring dual NPN switching with integrated biasing. Consider the 50V breakdown voltage and 100mA current limits to ensure adequate headroom for the intended load conditions.
This part belongs to the family of resistor-equipped transistors (RET) offered by NXP Semiconductors. These devices combine standard bipolar transistors with precision resistors to simplify circuit design. The PQMH9Z specifically provides a dual NPN configuration suitable for compact electronic designs.
Cross-reference with PUMH9 series variants from NXP or Nexperia for compatible dual NPN pre-biased alternatives. Verify pin compatibility and electrical specifications before substitution.