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The PRFMB100W12 is a single IGBT module manufactured by KYOCERA AVX, designed for high-power switching applications. It features a silicon-based technology with a voltage rating of 1200 V and a continuous current capacity of 100 A. The device incorporates an integrated Fast Recovery Diode (FRD) within a brake chopper circuit configuration. Key electrical parameters include a maximum gate-emitter voltage of 20 V and a gate-emitter leakage current of 1 uA. The module is rated for a power dissipation of 403 W and utilizes a chassis mount style for thermal management.
Verify the specific datasheet version and technical specifications directly from KYOCERA AVX official documentation before integration. Confirm that the chassis mount mechanical dimensions and thermal requirements align with your system design constraints. Ensure compatibility with the required gate drive signals given the 20 V maximum gate-emitter voltage limit. Cross-reference the part number to confirm availability and lead times through authorized distributors.
Select this component when a combined IGBT and FRD solution is required for braking or regenerative energy handling. The 1200 V rating suits medium-to-high voltage DC bus applications. Consider the 403 W power dissipation capability for thermal design purposes. The chassis mount style necessitates appropriate heatsinking infrastructure. Verify that the 100 A current rating meets the peak and RMS load requirements of the target application.
This module belongs to the IGBT Modules category within the KYOCERA AVX portfolio. It represents a discrete power semiconductor solution combining switching and freewheeling functionalities. The product is distinct from standard discrete transistors by offering a pre-configured half-bridge-like topology optimized for specific industrial use cases.
No public confirmed substitute part numbers are available in the provided data.