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The PRMB11 is a PNP/PNP Resistor-Equipped double Transistor (RET) manufactured by Nexperia USA Inc. It is housed in an ultra-small DFN1412-6 (SOT1268) leadless SMD plastic package with a low profile of 0.5 mm. The device features built-in bias resistors, simplifying circuit design and reducing component count. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, an output current (IO) of -100 mA, and a DC current gain (hFE) of 30 at VCE = -5 V and IC = -5 mA. The typical bias resistor R1 value is 10 kΩ, with a ratio R2/R1 of 1.
Verify the specific ordering suffix to ensure correct packaging configuration. Confirm that the DFN1412-6 footprint matches the PCB layout requirements. Check the latest datasheet revision for any updates to thermal characteristics or marking codes before finalizing procurement specifications.
Select the PRMB11 when a dual PNP transistor with integrated biasing is required for digital logic interfacing. Consider the -50 V rating and 100 mA current capability against load requirements. Evaluate the DFN1412-6 package dimensions against available board space constraints compared to standard SOT packages.
The PRMB11 serves as a cost-saving alternative to discrete BC847/BC857 series transistors in digital applications. Its complement parts include the NPN/NPN PRMH11 and the NPN/PNP PRMD3. The device integrates two PNP transistors with bias resistors into a single compact package to minimize assembly costs.
Direct functional substitutes include the PRMH11 for NPN/NPN configurations and the PRMD3 for mixed NPN/PNP setups. Verify pin compatibility and electrical ratings when replacing discrete BC847/BC857 components with this RET device.
The typical value for bias resistor R1 is 10 kΩ, with a range from 7 kΩ to 13 kΩ.
Yes, the PRMB11 is AEC-Q101 qualified, making it suitable for use in automotive applications.
The maximum collector-emitter voltage (VCEO) with an open base is -50 V.