PRMD10Z

Overview

The PRMD10 is a dual Resistor-Equipped Transistor (RET) containing one NPN and one PNP transistor in a DFN1412-6 (SOT1268) package. It features a collector-emitter voltage of 50 V, an output current capability of 100 mA per transistor, and a typical DC current gain (hFE) of 100 at 10 mA. The device includes built-in bias resistors with a nominal value of 2.2 kΩ for R1 and a ratio of 21 for R2/R1. Total power dissipation reaches 325 mW per transistor and 480 mW per device at 25 °C ambient temperature.

Feature Summary

• AEC-Q101 qualified for automotive applications
• Ultra-thin 0.5 mm package height
• Integrated bias resistors simplify circuit design

Applications

• Digital logic applications
• IC input control circuits
• Load switching operations

Procurement Notes

Verify the specific ordering suffix to confirm packaging details such as reel size or tape type. Confirm that the component meets AEC-Q101 requirements if intended for automotive use. Ensure the footprint matches the DFN1412-6 outline dimensions provided in the datasheet before finalizing procurement orders.

Selection Notes

Select this component when space constraints require an ultra-thin profile below 0.5 mm. Use it to replace discrete resistor-transistor combinations in digital logic or switching circuits. Verify that the 50 V rating and 100 mA current limit align with the target application's electrical demands.

Part Context

This part belongs to Nexperia's RET family, offering integrated biasing within a compact leadless package. It serves as a direct replacement for larger through-hole or standard SMD transistor-resistor networks. The DFN1412-6 package provides thermal efficiency suitable for high-density PCB layouts.

Replacement Considerations

• PRMH10

FAQ

What is the marking code for the PRMD10?

The marking code for the PRMD10 is B5.

What is the maximum junction temperature?

The maximum junction temperature is 150 °C.