SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PRMD12 is a Resistor-Equipped double Transistor (RET) containing one NPN and one PNP transistor in an ultra-small DFN1412-6 (SOT1268) leadless package. It features built-in bias resistors with a nominal value of 47 kΩ for R1 and a ratio of 1 for R2/R1. The device supports a collector-emitter voltage of 50 V, an output current of 100 mA, and a DC current gain (hFE) of 80 at 5 mA. Total power dissipation reaches 325 mW per transistor and 480 mW per device. Transition frequencies are 230 MHz for the NPN and 180 MHz for the PNP.
Verify the specific ordering suffix to confirm packaging type, as standard distribution may vary between tape-and-reel or cut tape formats. Confirm RoHS compliance status and ensure the procurement channel provides traceability documentation required for automotive-grade components. Check for any recent product change notices that might affect marking codes or thermal characteristics.
Select this RET when replacing discrete resistor-transistor networks to save board space. Ensure the 50 V rating meets the system voltage requirements. Verify that the 47 kΩ base resistance aligns with the driving source impedance. Consider the DFN1412-6 footprint dimensions during PCB layout to ensure adequate thermal relief and solder paste application.
This component belongs to Nexperia's family of resistor-equipped double transistors designed for digital switching. It serves as a compact alternative to discrete BC847/BC857 combinations. The complementary NPN/NPN variant is designated as PRMH12. Both devices utilize the same SOT1268 package to maintain consistency in automated assembly processes.
Direct replacements include the PRMH12 for NPN/NPN configurations. Verify pinout compatibility if substituting with other RET families. Ensure the replacement part maintains the same 47 kΩ bias resistance and 50 V breakdown voltage to prevent circuit malfunction.