PRMD13Z

Overview

The PRMD13 is a Resistor-Equipped double Transistor (RET) containing one NPN and one PNP transistor in an ultra-small DFN1412-6 (SOT1268) leadless surface-mount package. It features built-in bias resistors, with R1 at 4.7 kΩ and an R2/R1 ratio of 10. The device supports a collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 100 mA per transistor. DC current gain (hFE) is specified at a minimum of 100 at IC = 10 mA. Transition frequencies are 230 MHz for the NPN and 180 MHz for the PNP transistor. Total power dissipation is 480 mW at Tamb ≤ 25 °C.

Feature Summary

• Integrated bias resistors simplify circuit design and reduce component count
• Ultra-thin package height of 0.5 mm suitable for space-constrained applications
• Qualified for automotive applications under AEC-Q101 standards

Applications

• Digital logic applications
• Control of IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix to confirm packaging type, as standard data sheets may not detail reel or tape specifications. Confirm RoHS compliance status and manufacturing site details through official Nexperia channels before finalizing procurement orders.

Selection Notes

Select this RET when replacing discrete resistor-transistor networks to save board space. Ensure the 50 V rating and 100 mA current capability meet the load requirements. Verify that the 4.7 kΩ base resistor value aligns with the driving source impedance.

Part Context

This component belongs to the PRMD series of dual transistors equipped with resistors. It serves as a complement to the PRMH13, which contains an NPN/NPN configuration instead of the NPN/PNP arrangement found in the PRMD13.

Replacement Considerations

PRMH13 is the complementary NPN/NPN variant within the same family.