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The Nexperia PRMD16 is a Resistor-Equipped double Transistor (RET) containing one NPN and one PNP transistor in an ultra-small DFN1412-6 (SOT1268) leadless surface-mounted package. It features built-in bias resistors, specifically R1 at 22 kΩ and an R2/R1 ratio of 2.13. The device supports a collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) of 80 minimum at 5 mA, a transition frequency (fT) of 180 MHz typical, and a total power dissipation of 480 mW. The component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the DFN1412-6 footprint matches the PCB layout requirements. Check for RoHS compliance status and confirm the product status is active before finalizing procurement plans.
Select this component when a compact dual-transistor solution with integrated biasing is required. The low profile and small footprint make it suitable for high-density boards. Ensure the 50 V rating and 100 mA current capability meet the application's electrical demands. Consider the thermal resistance values if operating near maximum power dissipation limits.
The PRMD16 belongs to Nexperia's family of Resistor-Equipped Transistors (RETs). These devices combine discrete transistors with internal base resistors to replace multiple components. This specific model offers a complementary NPN/PNP pair in a leadless package, serving as a cost-saving alternative to standard discrete transistor pairs in digital switching circuits.
No direct public substitute part numbers are documented in the provided datasheet.