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The PRMH11 is a dual NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in an ultra-thin DFN1412-6 (SOT1268) leadless package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design and reduce component count. The device supports a collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Key electrical parameters include a DC current gain (hFE) of 30 at 5 mA, a typical transition frequency (fT) of 230 MHz, and a bias resistor value of 10 kΩ. Qualified under AEC-Q101 standards, it operates within an ambient temperature range of -55 °C to +150 °C.
Verify the specific ordering code against the manufacturer's official database to ensure correct package version and marking. Confirm that the DFN1412-6 footprint matches your PCB layout guidelines. Check for any recent product status changes or obsolescence notices on the supplier portal before finalizing procurement plans.
Select this RET when space savings and simplified biasing are required for NPN switching tasks. Compare the 10 kΩ internal resistor against discrete alternatives if precise base drive currents are critical. Ensure the 50 V rating and 100 mA current capability exceed your maximum load requirements. Consider the thermal resistance characteristics for high-density board layouts.
This component belongs to Nexperia's Resistor-Equipped Transistor family, designed to replace multiple discrete components. The PRMH11 serves as the NPN/NPN variant, while complementary PNP/PNP (PRMB11) and NPN/PNP (PRMD3) options exist. These devices streamline digital interface designs by integrating necessary base resistors directly into the transistor package.
Direct replacements include the PRMB11 for PNP/PNP configurations or the PRMD3 for NPN/PNP pairs. Verify pin compatibility and electrical ratings when substituting with other RET families. Ensure the alternative device meets the same AEC-Q101 qualification if automotive use is intended.