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The PRMH13Z is a dual NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in an ultra-thin DFN1412-6 (SOT1268) leadless package. It features built-in bias resistors with R1 ranging from 3.3 kΩ to 6.1 kΩ and an R2/R1 ratio of 8 to 12. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at IC = 10 mA, a saturation voltage (VCEsat) maximum of 100 mV at IC = 5 mA, and a transition frequency (fT) typical value of 230 MHz. Total power dissipation is rated at 325 mW per transistor and 480 mW per device.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the DFN1412-6 footprint matches the PCB layout guidelines provided in the datasheet. Ensure compliance with RoHS3 directives and check for any relevant PCN updates regarding assembly sites or material changes before finalizing procurement.
Select this component when a compact dual NPN solution with integrated base resistors is required. The fixed resistor values (R1: 3.3k-6.1kΩ) suit standard digital logic levels. Consider the thermal resistance of 385 K/W per transistor for free-air operation. Verify that the 50 V voltage rating and 100 mA current capability meet the specific load requirements of the target application.
The PRMH13Z belongs to Nexperia's RET family, designed to replace multiple discrete components. Its complement is the PRMD13, which combines NPN and PNP types. The device utilizes the SOT1268 package outline, offering a body size of 1.4 mm x 1.2 mm. This integration reduces pick-and-place costs and board space compared to using separate transistors and resistors.
PRMD13 serves as the NPN/PNP complement within the same product family.