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The PS12012-A is a flat-base insulated Application Specific Intelligent Power Module (ASIPM) manufactured by Mitsubishi Semiconductor. It integrates a 3-phase IGBT inverter bridge with dynamic braking capabilities, utilizing third-generation IGBT and diode technologies. The module supports an AC 400V class line output and provides integrated drive, protection, and system control functions for P-side, N-side, and brake circuit IGBTs. Key electrical ratings include a supply voltage of up to 600V, continuous inverter output current of 1.2A RMS at 100% load, and 1.8A RMS at 150% overload for one minute. Thermal resistance from junction to case is typically 3.0°C/W for the inverter IGBT.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm datasheet revision dates and specific ordering suffixes match project requirements. Ensure thermal interface materials are compatible with the flat-base package design. Review isolation voltage ratings against system safety standards before integration.
Select this module for low-power AC 400V class applications where space efficiency and integrated protection are critical. Consider the 1.2A RMS continuous current rating and 600V supply voltage limits. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Ensure control logic interfaces align with the 5V CMOS/TTL input compatibility.
This component belongs to the Mitsubishi Semiconductor ASIPM family, designed to simplify inverter designs by combining power switching and control electronics. It utilizes flat-base insulated packaging for efficient heat dissipation and electrical isolation. The module targets compact motor control systems requiring reliable operation within specified temperature ranges.
No public confirmed substitute part numbers are available in the provided documentation. Consult manufacturer catalogs for updated series replacements if discontinuation occurs.
The module includes an input interlock protection circuit that cuts off both upper and lower IGBTs of a mal-triggered phase if simultaneous LOW level signals are detected, outputting an FO1 fault signal.
Apply a train of short ON pulses at all N-IGBT input pins for adequate charging, with a pulse width of approximately 20 μs and 10 to 500 pulses depending on capacitor size.
Yes, due to the integrated photo-coupler inside the module, direct coupling to a CPU is possible without any external opto or transformer isolation.