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The PS2561-1-H-A is a single-channel transistor output optocoupler manufactured by CEL. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a plastic DIP-4 package. Key electrical parameters include a maximum collector-emitter breakdown voltage of 80 V, a typical current transfer ratio of 130%, and a maximum forward current of 80 mA. The device provides high isolation with a maximum insulation voltage of 5000 Vrms. Operating temperature ranges from -55 °C to 100 °C, with a maximum dark current of 100 nA.
Verify the specific suffix 'H' against official CEL documentation to confirm pinout compatibility and thermal characteristics. Ensure the procurement source provides valid RoHS compliance certificates if required by your manufacturing standards. Cross-reference the datasheet revision date to ensure alignment with current production specifications.
Select this component when a single-channel isolation barrier is required with moderate speed switching capabilities. Consider the 80 V collector-emitter voltage limit for low-voltage logic interfacing. Verify that the DIP-4 package footprint matches the PCB design constraints compared to surface-mount alternatives in the same series.
This part belongs to the PS2561 series of single transistor type photocouplers. The series typically includes variants such as PS2561-1, PS2561L-1, and multi-channel versions like PS2561-2 and PS2561-4. These devices are designed for general-purpose isolation applications requiring reliable performance across industrial temperature ranges.
Direct substitutes may include the PS2561-1-A or PS2561-1-E3 from compatible manufacturers, provided pinouts and electrical ratings match. Surface-mount equivalents like the PS2561L-1 series offer similar functionality but require different packaging considerations.