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The PS2561AL1-1-F3-H-A is a transistor output optocoupler manufactured by CEL. It integrates a GaAs infrared LED and an NPN silicon phototransistor in a single channel configuration. The device provides high isolation voltage of 5000 Vrms between input and output circuits. It features a DIP-4 package with lead bending L1 type construction. Key electrical parameters include a collector-emitter breakdown voltage of 80 V, maximum collector current of 50 mA, and forward voltage of 1.4 V at 80 mA forward current. The unit operates within a temperature range of -55°C to +100°C.
Verify component authenticity through authorized distribution channels due to obsolete status. Confirm package integrity and pin alignment upon receipt. Check datasheet revisions for any parameter updates. Ensure storage conditions meet manufacturer specifications to prevent degradation. Validate compatibility with existing PCB footprints before integration.
Consider the obsolete lifecycle status when planning long-term production. Evaluate alternative components if new design implementation is required. Verify that the L1 package style matches the target assembly process. Assess thermal management needs given the operating temperature range. Confirm isolation voltage requirements align with system safety standards.
This component belongs to the PS2561 series of transistor output optocouplers. The series offers various package options including standard DIP and surface mount variants. The AL1 designation indicates specific lead forming characteristics. The product line is designed for general-purpose isolation applications in electronic circuits.
PS2581AL1-A is listed as a similar available substitute. Verify pinout compatibility and electrical parameter equivalence before substitution. Review datasheet differences regarding package dimensions and thermal characteristics.