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The PS2561D-1Y-V-H-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It features an NPN phototransistor output and utilizes a DIP-4 surface mount package. The device provides 5000 Vrms isolation voltage between input and output circuits. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a maximum collector current of 50 mA, and a forward voltage of 1.2 V at a maximum forward current of 40 mA. The typical current transfer ratio ranges from 130% to 260%, with a power dissipation capacity of 150 mW. Operating temperatures span from -55°C to +110°C.
Verify the specific suffix codes against official Renesas documentation to confirm pinout configuration and material compliance. Ensure the selected variant matches the required insulation voltage and thermal characteristics for the target application environment. Cross-reference datasheet revisions to validate performance specifications before integration into production designs.
Select this component when a surface mount solution with high isolation voltage is required for single-channel signal coupling. Consider the 80 V collector-emitter voltage rating and 50 mA output current capability for load requirements. Verify that the DIP-4 footprint aligns with the printed circuit board layout constraints and assembly processes.
This part belongs to the PS2561 series of transistor output optocouplers produced by Renesas Electronics. The series offers various packaging options including through-hole and surface mount configurations. The specific model integrates an infrared emitting diode with an NPN phototransistor to facilitate efficient signal transfer across isolated domains while maintaining electrical safety standards.
PS2561D-1Y-F3-A