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The PS2561DL-1Y-F3-W-A is a transistor output optocoupler featuring a GaAs infrared LED and an NPN silicon phototransistor. It provides 5000 Vrms isolation voltage and operates at an ambient temperature up to 110°C. The device utilizes a lead bending type package designed for long creepage distance, suitable for surface mount applications. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a typical current transfer ratio of 160%, and switching times of 3 µs rise and 5 µs fall.
Verify the specific suffix F3-W-A against official Renesas documentation to confirm tape and reel packaging specifications. Ensure the component meets required safety certifications such as UL1577 for the intended application environment. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before procurement.
Select this component when high-speed switching and robust isolation are required in a surface-mount configuration. The 110°C temperature rating makes it suitable for environments with elevated thermal loads. Consider the 160% typical CTR for driving standard logic inputs without additional amplification stages.
This part belongs to the NEPOC series of DIP photocouplers manufactured by Renesas Electronics. It shares functional similarities with the PS2561D-1 but differs in package style, utilizing a lead bending type for surface mounting rather than a standard through-hole DIP. The series is designed for general-purpose digital signal isolation.
PS2561DL-1 is a related variant within the same family offering similar electrical characteristics but may differ in packaging or taping options.