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The PS2561L-1-E3-H-A is a single-channel transistor output optocoupler manufactured by CEL. It integrates a GaAs infrared emitting diode and an NPN silicon phototransistor within a surface-mount package. Key electrical parameters include a minimum collector-emitter breakdown voltage of 80 V, a maximum forward current of 40 mA, and a typical current transfer ratio of 400% at 5 mA input. The device offers high isolation voltage of 5000 Vrms and operates within a temperature range of -55 °C to +110 °C.
Verify the specific suffix H-A against official datasheets to confirm tape and reel packaging configuration. Ensure compatibility with RoHS standards if required by your manufacturing process. Cross-reference manufacturer documentation for exact mechanical dimensions and soldering profiles to prevent assembly defects.
Select this component when high isolation voltage and surface mount convenience are required. The transistor output type suits digital signal switching applications. Verify that the 80 V collector-emitter breakdown voltage meets the load requirements of the target circuit design.
This part belongs to the NEPOC series of photocouplers from CEL. It shares functional similarities with other PS2561 variants but differs in package style and termination type. The L2 designation typically indicates a wide lead bending form factor suitable for specific PCB layout constraints.
Direct substitutes may include PS2561L-1-F3-H-A or PS2561AL2-1-E3-A-L. Verify pinout compatibility and electrical ratings before substitution. Consult official replacement guides to ensure equivalent performance characteristics.