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The PS2561L-1-L-A is a single-channel transistor output optocoupler manufactured by CEL. It integrates a Gallium Arsenide (GaAs) infrared emitting diode with an NPN silicon phototransistor to provide electrical isolation. The device features a high isolation voltage of 5000 Vrms and operates within a temperature range of -55°C to +100°C. Key electrical parameters include a collector-emitter breakdown voltage of 80V, a maximum forward current of 30mA, and a typical current transfer ratio of 200% at 5mA input. The component utilizes a surface-mount DIP-4 Gull Wing package.
Verify the manufacturer designation as CEL or Renesas Electronics, as product lines have transitioned. Confirm the specific suffix L-A corresponds to the Gull-wing surface mount package variant. Ensure compliance with RoHS directives if lead-free status is required for the specific production batch. Cross-reference datasheet revisions to confirm pinout consistency with existing designs.
Select this component when a single-channel isolation barrier is needed with moderate speed requirements. The NPN phototransistor output suits digital switching applications. Verify that the 80V collector-emitter voltage rating meets the load requirements. Consider the operating temperature range up to 100°C for environments with elevated thermal loads.
This part belongs to the PS2561 series of high isolation voltage photocouplers. The series includes variants such as PS2561A-1 and PS2561F-1, which share similar internal structures but may differ in packaging or safety certifications. The PS2561L-1 variant specifically denotes the lead-bending type suitable for surface mounting technologies.
Direct substitutes include PS2561L-1-V or PS2561L-1-E3 from Renesas/CEL. Verify pin compatibility and isolation voltage ratings before substitution. Alternative manufacturers may offer functionally equivalent parts, but safety approvals must be re-evaluated.