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The PS2561L1-1 is a single-channel transistor output optocoupler manufactured by CEL. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a compact 4-pin Dual In-line Package (DIP). The device provides high isolation voltage of 5000 Vrms between input and output circuits. Key electrical characteristics include a collector-emitter breakdown voltage of 80 V, a maximum forward current of 30 mA, and a typical current transfer ratio of 200%. It operates within a temperature range of -55°C to +100°C.
Verify the manufacturer origin carefully, as the PS2561 series is primarily associated with Renesas Electronics. Ensure the specific part number matches the required package type and electrical ratings from official datasheets before procurement. Confirm RoHS compliance status if required for your application.
Select this component when a single-channel optoisolator with high isolation voltage is needed. Consider the DIP-4 package constraints and the NPN phototransistor output characteristics. Verify that the current transfer ratio and switching speeds meet the system requirements compared to alternative families.
This component belongs to the PS2561 family of high-isolation voltage optocouplers. The L1 suffix typically denotes a specific lead form or package variation suitable for surface mount technology, distinguishing it from standard through-hole DIP variants like the PS2561-1.
Cross-reference with Renesas PS2561L1-1-E3-A-L for equivalent specifications. Verify pinout compatibility and electrical parameters such as CTR and isolation voltage before substitution.