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The PS2561L2-1-V-H-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a GaAs infrared emitting diode and an NPN silicon phototransistor within a DIP-4 Gull Wing package. The device provides high isolation voltage of 5000 Vrms. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a maximum collector current of 50 mA, and a power dissipation of 150 mW. Typical switching times are 3 µs for rise time and 5 µs for fall time. The unit operates within a temperature range of -55°C to +100°C.
Verify component authenticity through authorized channels due to potential availability constraints. Confirm RoHS compliance status and specific suffix designations against the latest manufacturer datasheet. Check for obsolescence notices or lifecycle changes prior to procurement. Ensure packaging specifications match assembly requirements.
Select this component when high isolation voltage and standard switching speeds are required for single-channel applications. Consider the DIP-4 package dimensions for PCB layout compatibility. Evaluate thermal management needs given the 150 mW power dissipation rating. Compare current transfer ratio specifications against drive circuit capabilities.
This part belongs to the PS2561L series of transistor output optocouplers from Renesas Electronics. The series is designed for general-purpose isolation applications. The L2 variant typically denotes specific pin spacing or lead form variations compared to standard L versions. The H-A suffix indicates specific tape and reel or tube packaging configurations.
PS2561L-1-F3-A is listed as a parameter equivalent alternative by the manufacturer.